As the core of third-generation semiconductor materials, gallium nitride (GaN) has broken through the performance bottleneck of traditional silicon-based materials with its advantages such as wide bandgap, high breakdown electric field, high frequency characteristics and low conduction loss, and is widely used in consumer electronics, communications, new energy, industry and other fields. The following is a detailed breakdown of its main application scenarios:
This is the most mature and penetrated area of GaN technology, and the core application is fast charging power adapters.
Compared with traditional silicon-based chargers, GaN chargers can reduce the size by 30%-50% (such as a 65W GaN fast charging head is only the size of lipstick) at the same power, and the energy conversion efficiency is increased to more than 93%, with lower heating and faster charging speed. At present, it has become the mainstream fast charging solution for smartphones, laptops, tablets, game consoles and other devices, with mainstream power covering 30W-240W.
Extended applications include small energy storage power supplies (portable power banks), mini PC power supplies, and smart home device power supply modules (such as smart speakers, cameras), which enhance product experience through miniaturization and high efficiency.
GaN is a key material for 5G/6G communication base stations and satellite communications, especially suitable for high-frequency band communication needs:
Base Station RF Amplifier (PA): The Massive MIMO antenna system of 5G base stations requires high-frequency, high-power RF devices, GaN can operate at frequencies from sub-6GHz to millimeter-wave frequency bands, and the power density is 3-5 times that of silicon LDMOS, which can significantly improve base station signal coverage and energy efficiency while reducing base station size and power consumption.
Satellite communication and radar: In low-orbit satellites and phased array radars, GaN devices can withstand higher temperatures and powers, making them suitable for harsh environments such as space and military industry to transmit and receive high-frequency signals.
GaN is reconstructing the power conversion system for new energy vehicles and energy grids:
New energy vehicles:
On-board chargers (OBCs): GaN devices can increase OBC power to more than 22kW and reduce the size by 40% for faster on-board charging;
Direct current converter (DC/DC): In the power conversion between the battery and the motor, GaN can reduce losses (20%-30% less than silicon-based) and improve the vehicle range.
Wireless charging module: Utilizes high-frequency characteristics to achieve efficient and miniaturized on-board wireless charging.
Power grid and energy storage: In photovoltaic inverters, energy storage system converters, and high-voltage direct current transmission (HVDC), GaN can improve the power conversion efficiency (photovoltaic inverter efficiency can reach more than 99%), reduce the cost of heat dissipation systems, and adapt to the high-frequency and high-power needs of new energy grid-connected.
Industrial power supply: In high-frequency switching power supplies, laser cutting power supplies, welding power supplies, and other equipment, GaN can achieve higher frequency power conversion (up to MHz level), reduce the size of equipment, and adapt to the compact layout requirements of industrial automation.
Military and aerospace: GaN's high temperature resistance (operating temperature can reach more than 200°C) and radiation resistance make it suitable for extreme environments while meeting the requirements of lightweight and high reliability.
Audio Power Amplifiers: GaN amplifiers enable higher fidelity and power density in high-end audio, Bluetooth headsets, and car audio, reducing distortion and reducing device size.
Mini/Micro LED Display Driver: GaN's high-frequency switching feature adapts to the progressive scan drive requirements of LED displays, improving display refresh rate and energy efficiency, and reducing driver module power consumption.
At present, GaN-on-Si (GaN-on-Si) is the mainstream commercial solution with low cost; GaN-on-SiC (GaN-on-SiC) is aimed at higher-power scenarios (such as megawatt-level energy storage and aero engine power supply), and will penetrate into cutting-edge fields such as artificial intelligence server power supplies and quantum computing cooling systems in the future.
英文
